![]() Combined screening by maternal factors, uterine artery PI, mean arterial pressure and serum PLGF can predict 90% of early-PE and 75% of preterm-PE, at screen positive rate (SPR) of 10% (.Prophylactic use of aspirin does not reduce the incidence of term-PE 2. The ASPRE trial has shown that in pregnancies at high-risk for PE administration of aspirin reduces the rate of early-PE (<32 weeks) by about 90% and preterm-PE by 60%. The objective of screening at this stage is the identification of a group at high-risk for preterm-PE (You can obtain risks for PE based on maternal factorsĪlone and in combination with any of the biomarkers.Ĭlinical application Screening for PE at 11-14 weeks 1 An intuitive UI that simply and instantly displays the most vital performance data speeds up R&D by quickly discounting inappropriate devices.This application uses Bayes theorem to combine the prior risk from maternal factors and medical history with the results of variousīiophysical and biochemical measurements to estimate the posterior risk for PE. With these updates, we continue to remove barriers to the switch to SiC. The tool also warns if a selection is not suitable, allowing engineers to quickly find the ideal design solution.Īnup Bhalla, VP Engineering at UnitedSiC, comments: “The purpose of the FET-Jet Calculator™ has always been to make selecting the right device in the right power topology as easy as possible. All UnitedSiC FETs and Schottky diodes can be selected from sortable tables including the latest Gen 4 750V devices. ![]() Finally, once the preferred SiC solution is defined, all input/output design information can be easily downloaded in pdf form.Īs with the first version of the calculator, users select their application function and topology, enter their design parameter details, and the tool automatically calculates switch current, efficiency, and losses, categorized by conduction, turn-on, and turn-off contributions. Optimal gate drive and snubber recommendations are also displayed. With more available topologies, FET-Jet Calculator now supports an even wider range of power applications, making UnitedSiC FETs accessible to anyone looking to work with SiC for the first time or experienced designers seeking the best SiC device to suit their design.Īllowing for engineers to identify the optimal UnitedSiC device across AC/DC, DC/DC and DC/DCiso power designs, this upgrade adds instant bar chart results presenting both losses and efficiency data. First launched in March, this simple, registration-free online tool facilitates the designer’s selection and performance comparison process, in different power applications and 26 unique topologies. This new version (v2) significantly streamlines the SiC FET and Schottky diode selection process and simplifies the analysis of all power related results. UnitedSiC, a leading manufacturer of silicon carbide (SiC) power semiconductors, has launched an upgrade to its FET-Jet Calculator™ . Enhancements to the online power design tool make identifying optimal SiC FET design solutions even easier
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